PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features 80V Collector-Emitter Voltage (VCEO) and 500mA Max Collector Current. Offers a 1W Max Power Dissipation and a 50MHz Gain Bandwidth Product. Operates from -55°C to 150°C and is RoHS compliant.
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Onsemi MPSW56RLRAG technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 7.87mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 5.21mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -80V |
| Width | 4.19mm |
| RoHS | Compliant |
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