The MSB1218A-RT1G is a PNP bipolar junction transistor with a collector-emitter voltage maximum of 45V and a maximum collector current of 100mA. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 150mW. The transistor is lead free and RoHS compliant, packaged in a SOT-323, SC-70 3-pin configuration.
Current Rating-100mA
PolarityPNP
Quick Jump:
Technical Specifications
Onsemi MSB1218A-RT1G technical specifications.
General
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 45V |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 210 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | MSB1218A-RT1 |
| DC Rated Voltage | -45V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MSB1218A-RT1G Datasheet
Download the complete datasheet for Onsemi MSB1218A-RT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
