The MSB710-RT1G is a PNP transistor with a collector-emitter breakdown voltage of 50V and a collector current rating of 500mA. It is packaged in a TO-236-3 surface mount package and has a maximum operating temperature of 150°C. The transistor is RoHS compliant and lead free. It has a minimum current gain of 120 and a maximum power dissipation of 200mW.
PackageTO-236-3
Current Rating-500mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi MSB710-RT1G technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -600mV |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 100nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MSB710-RT1G Datasheet
Download the complete datasheet for Onsemi MSB710-RT1G to view detailed technical specifications.
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