NPN Bipolar Junction Transistor (BJT) in a compact SC-70 (SOT-323) 3-lead package. Features a maximum collector-emitter voltage (VCEO) of 60V and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 210 and a low collector-emitter saturation voltage of 500mV. Operates across a wide temperature range from -55°C to 150°C with a power dissipation of 150mW. Supplied on a 3000-piece tape and reel.
PackageSC
Current Rating100mA
PolarityNPN
Power150mW
Quick Jump:
Technical Specifications
Onsemi MSD1819A-RT1G technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 0.9mm |
| hFE Min | 210 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.
Product Images
