P-channel power MOSFET featuring 30V drain-source breakdown voltage and 50A continuous drain current. Offers a low 25mΩ Rds(on) at 10Vgs, with a maximum power dissipation of 125W. This single-element transistor is housed in a D2PAK package and is RoHS compliant. Key parameters include a -1.5V threshold voltage and 4.9nF input capacitance.
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Onsemi MTB50P03HDLG technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 50A |
| Current Rating | -50A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 218ns |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 4.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 25mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 90ns |
| DC Rated Voltage | -30V |
| RoHS | Compliant |
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