N-channel enhancement mode power MOSFET in a TO-252 DPAK package, featuring a 60V drain-source voltage and 12A continuous drain current. This surface-mount device offers a low 150mΩ maximum drain-source resistance at 10V Vgs and a typical gate charge of 12.7nC. With a maximum power dissipation of 3900mW, it operates across a wide temperature range from -55°C to 175°C. The 3-pin DPAK package utilizes gull-wing leads for reliable surface mounting.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi MTD3055V datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 6.22(Max) |
| Package Height (mm) | 2.39(Max) |
| Seated Plane Height (mm) | 2.52(Max) |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 12A |
| Maximum Drain Source Resistance | 150@10VmOhm |
| Typical Gate Charge @ Vgs | 12.7@10VnC |
| Typical Gate Charge @ 10V | 12.7nC |
| Typical Input Capacitance @ Vds | 500(Max)@25VpF |
| Maximum Power Dissipation | 3900mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Onsemi MTD3055V to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
These are design resources that include the Onsemi MTD3055V
Product discontinuance notice from onsemi for various MOSFETs and transistors produced at the Tower Jazz fab, providing end-of-life dates and potential replacement parts.
Immediate product discontinuance notice from onsemi for various MOSFETs and discrete components produced at the Tower fab, effective December 24, 2021.
