N-channel power MOSFET featuring 100V drain-source voltage and 9A continuous drain current. This surface-mount transistor is housed in a DPAK (TO-252AA) package with a gull-wing lead shape, offering a 3-pin configuration. Key electrical characteristics include a maximum drain-source on-resistance of 250 mOhm at 10V and a typical gate charge of 14 nC. The component supports a maximum power dissipation of 1750 mW and operates within a temperature range of -55°C to 150°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Onsemi MTD9N10E technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 6.35(Max) |
| Package Height (mm) | 2.38(Max) |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 9A |
| Maximum Drain Source Resistance | 250@10VmOhm |
| Typical Gate Charge @ Vgs | 14@10VnC |
| Typical Gate Charge @ 10V | 14nC |
| Typical Input Capacitance @ Vds | 610@25VpF |
| Maximum Power Dissipation | 1750mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi MTD9N10E Datasheet
Download the complete datasheet for Onsemi MTD9N10E to view detailed technical specifications.
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