P-Channel Power MOSFET featuring a -500V drain-source breakdown voltage and a continuous drain current of 2A. This single-element transistor offers a low drain-source on-resistance of 6 Ohms. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 75W. The component is housed in a TO-220-3 package and is supplied in a 50-piece tube.
Sign in to ask questions about the Onsemi MTP2P50EG datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi MTP2P50EG technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2A |
| Current Rating | -2A |
| Drain to Source Breakdown Voltage | -500V |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 6R |
| Element Configuration | Single |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.28mm |
| Input Capacitance | 1.183nF |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| Rds On Max | 6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | -500V |
| Width | 4.82mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MTP2P50EG to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
