P-Channel Power MOSFET featuring a -500V drain-source breakdown voltage and a continuous drain current of 2A. This single-element transistor offers a low drain-source on-resistance of 6 Ohms. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 75W. The component is housed in a TO-220-3 package and is supplied in a 50-piece tube.
PackageTO-220-3
Current Rating-2A
PolarityP-CHANNEL
Power75W
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Technical Specifications
Onsemi MTP2P50EG technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2A |
| Current Rating | -2A |
| Drain to Source Breakdown Voltage | -500V |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 6R |
| Element Configuration | Single |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.28mm |
| Input Capacitance | 1.183nF |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| Rds On Max | 6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | -500V |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MTP2P50EG Datasheet
Download the complete datasheet for Onsemi MTP2P50EG to view detailed technical specifications.
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