N-channel power MOSFET featuring 60V drain-source breakdown voltage and 12A continuous drain current. This through-hole component offers a low 150mΩ drain-source resistance (Rds On) and a maximum power dissipation of 48W. Operating across a wide temperature range from -55°C to 175°C, it includes a 45ns fall time and 80ns turn-off delay. Packaged in a TO-220AB case, this RoHS compliant device is designed for robust power switching applications.
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Onsemi MTP3055V technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 12A |
| Current Rating | 12A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 60V |
| Dual Supply Voltage | 60V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 500pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 48W |
| Rds On Max | 150mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 80ns |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
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