Single P-Channel Power MOSFET featuring a -30V drain-source breakdown voltage and a continuous drain current of 50A. Offers a low drain-source on-resistance of 25mΩ at a 10V gate-source voltage. Housed in a TO-220-3 package, this component operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 125W. Logic-level gate drive is supported with a threshold voltage of -1.5V.
PackageTO-220-3
Current Rating-50A
PolarityP-CHANNEL
Power125W
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Technical Specifications
Onsemi MTP50P03HDLG technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 50A |
| Current Rating | -50A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 25MR |
| Element Configuration | Single |
| Fall Time | 218ns |
| Gate to Source Voltage (Vgs) | 15V |
| Height | 9.28mm |
| Input Capacitance | 4.9nF |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 22ns |
| DC Rated Voltage | -30V |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MTP50P03HDLG Datasheet
Download the complete datasheet for Onsemi MTP50P03HDLG to view detailed technical specifications.
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