
N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and 32A continuous drain current. Offers a low 75mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, with a maximum power dissipation of 180W. Operating temperature range spans from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 25ns and fall time of 91ns.
Onsemi MTW32N20E technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 32A |
| Current Rating | 32A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 91ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.3mm |
| Input Capacitance | 5nF |
| Lead Free | Contains Lead |
| Length | 15.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 180W |
| Rds On Max | 75mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 200V |
| Width | 5.3mm |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi MTW32N20E to view detailed technical specifications.
No datasheet is available for this part.
