N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and 32A continuous drain current. Offers a low 75mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, with a maximum power dissipation of 180W. Includes fast switching characteristics with turn-on delay of 25ns and fall time of 91ns. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-247
Current Rating32A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi MTW32N20EG technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 32A |
| Current Rating | 32A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 75MR |
| Fall Time | 91ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.3mm |
| Input Capacitance | 5nF |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 180W |
| Rds On Max | 75mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 200V |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MTW32N20EG Datasheet
Download the complete datasheet for Onsemi MTW32N20EG to view detailed technical specifications.
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