
NPN Bipolar Digital Transistor (BRT) in a compact SC package. Features a 50V Collector Emitter Breakdown Voltage and 100mA Continuous Collector Current. Offers a low 250mV Collector Emitter Saturation Voltage and a minimum hFE of 35. Operates across a wide temperature range from -55°C to 150°C. This RoHS compliant component is supplied in a 10000-piece tape and reel.
Onsemi MUN2211T3G technical specifications.
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Halogen Free | Halogen Free |
| Height | 1.09mm |
| hFE Min | 35 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 230mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 230mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Width | 1.5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MUN2211T3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
