NPN Digital BJT transistor, 50V collector-emitter breakdown voltage, 100mA continuous collector current, and 202mW power dissipation. Features include a minimum hFE of 80, operating temperature range of -55°C to 150°C, and SC package. This RoHS and Lead-Free compliant component is supplied in Tape and Reel packaging.
PackageSC
Current Rating100mA
PolarityNPN
Power202mW
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Technical Specifications
Onsemi MUN5213T1G technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Halogen Free | Halogen Free |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 202mW |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 202mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MUN5213T1G Datasheet
Download the complete datasheet for Onsemi MUN5213T1G to view detailed technical specifications.
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