NPN Digital BJT transistor with 50V collector-emitter voltage and 100mA continuous collector current. Features 250mV collector-emitter saturation voltage and 6V emitter-base voltage. Housed in a 3-pin SC-70 package, this component offers a minimum hFE of 160 and a maximum power dissipation of 202mW. Operates across a temperature range of -55°C to 150°C and is supplied on tape and reel.
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Onsemi MUN5215T1G technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Halogen Free | Halogen Free |
| Height | 0.85mm |
| hFE Min | 160 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Frequency | 10kHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 202mW |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 202mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Width | 1.24mm |
| RoHS | Compliant |
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