The MUN5231DW1T1G is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is packaged in a halogen-free and RoHS compliant SOT-363-6 package and is suitable for operating temperatures between -55°C and 150°C. The transistor has a minimum current gain of 8 and a maximum power dissipation of 250mW.
PackageSOT-363-6
Current Rating100mA
PolarityNPN
Power187mW
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Technical Specifications
Onsemi MUN5231DW1T1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Halogen Free | Halogen Free |
| hFE Min | 8 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 187mW |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MUN5231DW1T1G Datasheet
Download the complete datasheet for Onsemi MUN5231DW1T1G to view detailed technical specifications.
No datasheet is available for this part.