The MUN5231DW1T1G is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is packaged in a halogen-free and RoHS compliant SOT-363-6 package and is suitable for operating temperatures between -55°C and 150°C. The transistor has a minimum current gain of 8 and a maximum power dissipation of 250mW.
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| Package/Case | SOT-363-6 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Halogen Free | Halogen Free |
| hFE Min | 8 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 187mW |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| RoHS | Compliant |
These are design resources that include the Onsemi MUN5231DW1T1G
Official notice from ON Semiconductor detailing the discontinuance of various discrete, analog, and power products with final buy dates in late 2006.
