The MUN5235T1G is a small outline NPN transistor with a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA. It has a maximum power dissipation of 202mW and operates over a temperature range of -55°C to 150°C. This lead-free transistor is RoHS compliant and packaged in a tape and reel format.
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Onsemi MUN5235T1G technical specifications.
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 202mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 202mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| RoHS | Compliant |
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