NPN/PNP digital bipolar junction transistor with a 50V breakdown voltage and 100mA current capability. Features a 385mW power dissipation and a 6-pin SC-88 package with dual terminal positions. This device integrates two transistor elements for versatile digital switching applications. Maximum operating temperature reaches 150°C.
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Technical Specifications
Onsemi MUN5311DW1T1G technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 6 |
| Terminal Position | DUAL |
| Pin Count | 6 |
| Number of Elements | 2 |
Compliance
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.21.00.95 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Onsemi MUN5311DW1T1G Datasheet
Download the complete datasheet for Onsemi MUN5311DW1T1G to view detailed technical specifications.
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