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Technical Specifications
Onsemi MVDF1N05ER2G technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
2A
Drain to Source Voltage (Vdss)
50V
Element Configuration
Dual
FET Type
2 N-Channel
Input Capacitance
330pF
Max Power Dissipation
2W
Package Quantity
2500
Packaging
Tape and Reel
Rds On Max
300mR
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Onsemi MVDF1N05ER2G Datasheet
Download the complete datasheet for Onsemi MVDF1N05ER2G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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