The MVGSF1N02LT1G is a single N-channel JFET with a continuous drain current of 750mA and a drain to source breakdown voltage of 20V. It features a drain to source resistance of 90mR and an input capacitance of 125pF. The device is packaged in a SOT-23-3 package and is lead free and RoHS compliant. The operating temperature range is from -55°C to 150°C, with a maximum power dissipation of 400mW.
PackageSOT-23-3
PolarityN-CHANNEL
Power400mW
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Technical Specifications
Onsemi MVGSF1N02LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 750mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 125pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 2.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MVGSF1N02LT1G Datasheet
Download the complete datasheet for Onsemi MVGSF1N02LT1G to view detailed technical specifications.
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