This device is a high-current single-channel IGBT gate driver with internal galvanic isolation for high-power applications. It accepts 3.3 V to 5 V input-side supply levels and provides high output drive capability of +4 A and -6 A at IGBT Miller plateau voltages. Integrated protection and control features include complementary inputs, open-drain FAULT and Ready outputs, active Miller clamp, DESAT protection with programmable delay, soft turn-off, and UVLO functions. The driver supports negative DESAT voltage down to -9 V and provides 5000 V galvanic isolation with 1200 VIORM working voltage capability. It is offered in a wide-body SOIC-16 package with 8 mm creepage distance and is stated as Pb-free, halogen-free, and RoHS compliant.
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Onsemi NCD57001 technical specifications.
| Channel count | 1 |
| Output current source | 4A |
| Output current sink | 6A |
| Isolation voltage | 5000V |
| Working isolation voltage | 1200VIORM |
| Input-side supply voltage min | 3.3V |
| Input-side supply voltage max | 5V |
| DESAT negative voltage capability | -9V |
| Creepage distance | 8mm |
| Package | Wide-body SOIC-16 |
| Inputs | Complementary |
| Outputs | Open-drain FAULT and Ready |
| RoHS | Compliant |
| Halogen Free | Yes |
| Pb-free | Yes |