Onsemi
NCD57001DWR2G
Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation, 1000-REEL
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Technical Specifications
Onsemi NCD57001DWR2G technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 16 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G16 |
| Width | 7.5 |
| Length | 10.3 |
| Number of Functions | 1 |
| Temperature Grade | AUTOMOTIVE |
| Supply Current-Max | 6 |
| Supply Voltage-Nom | 5 |
| Interface IC Type | BUFFER OR INVERTER BASED IGBT DRIVER |
| Input Characteristics | STANDARD |
Compliance
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Onsemi NCD57001DWR2G Datasheet
Download the complete datasheet for Onsemi NCD57001DWR2G to view detailed technical specifications.
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