This device is a single-channel isolated gate driver for IGBT and MOSFET applications with 3.75 kVrms internal galvanic isolation. The B-version supports a negative output-side supply, delivers 6.5 A peak source and sink current, and accepts 3.3 V, 5 V, and 15 V logic inputs. It provides at least 100 kV/µs common-mode transient immunity, 90 ns maximum propagation delay, and 13 ns typical rise and fall times. The device is qualified to AEC-Q100, operates from -40 °C to 125 °C, and is offered in a narrow-body 8-SOIC package. It is RoHS compliant and listed as REACH unaffected.
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Onsemi NCD57080B technical specifications.
| Technology | Capacitive Coupling |
| Number of Channels | 1 |
| Isolation Voltage | 3750Vrms |
| Common Mode Transient Immunity | 100kV/µs |
| Propagation Delay tpLH / tpHL | 90 max / 90 maxns |
| Rise Time | 13 typns |
| Fall Time | 13 typns |
| Peak Output Current Source | 6.5A |
| Peak Output Current Sink | 6.5A |
| Output Supply Voltage | 0 to 32V |
| Negative Output Supply Voltage | -15 to 0V |
| Operating Temperature | -40 to 125°C |
| Package | 8-SOIC narrow body |
| Qualification | AEC-Q100 |
| RoHS | ROHS3 Compliant |
| REACH | REACH Unaffected |
