Single-channel isolated IGBT gate driver with 2.5 kVrms internal galvanic isolation and integrated DESAT short-circuit protection. It supports 3.3 V to 20 V input-side bias and up to 30 V output-side bias, with 7 A source and 7.5 A sink peak drive capability. The device provides 60 ns typical turn-on and turn-off propagation delay, with 10 ns rise time and 15 ns fall time. It includes programmable DESAT blanking, soft turn-off, undervoltage lockout on both sides, and a fault output for system reporting. The device operates from -40 °C to 125 °C and is offered in a narrow-body SOIC-8 package.
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Onsemi NCD57084 technical specifications.
| Isolation Voltage | 2.5kVrms |
| Channels | 1 |
| Topology | Single |
| Input Bias Voltage Max | 20V |
| Output Bias Voltage Max | 30V |
| Peak Source Current | 7A |
| Peak Sink Current | 7.5A |
| Turn-On Propagation Delay Typ | 60ns |
| Turn-Off Propagation Delay Typ | 60ns |
| Rise Time Typ | 10ns |
| Fall Time Typ | 15ns |
| Common Mode Transient Immunity | 100kV/µs |
| Operating Temperature Min | -40°C |
| Operating Temperature Max | 125°C |
| DESAT Threshold Typ | 9V |
| UVLO1 Output Enable Typ | 3.1V |
| UVLO2 Output Enable Typ | 12.9V |
| Package | SOIC-8 Narrow Body |
| RoHS | Compliant |
| Pb-free | Yes |
| Halogen Free/bfr Free | Yes |
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