This low-side gate driver is designed primarily for SiC MOSFETs and can deliver high gate-drive voltage to reduce conduction losses. It provides 6 A source and 6 A sink output capability, a selectable negative gate-bias rail of 0 V, -3.4 V, -5 V, or -8 V from its integrated charge pump, and a 5 V bias rail suitable for digital isolators. Protection features include adjustable undervoltage lockout, desaturation detection, and thermal shutdown. The device operates from a 10 V to 22 V positive supply over a -40 °C to 125 °C ambient range and supports switching frequencies up to 500 kHz.
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Onsemi NCP51705 technical specifications.
| Driver type | Low-side SiC MOSFET driver |
| Source current | 6A |
| Sink current | 6A |
| Positive supply voltage | 10 to 22V |
| Negative supply voltage | -8 to 0V |
| Selectable negative gate bias | 0, -3.4, -5, -8V |
| 5 V bias output current | 25 typmA |
| Maximum operating frequency | 500kHz |
| Operating ambient temperature | -40 to 125°C |
| UVLO positive-going threshold | 18 typV |
| UVLO negative-going threshold | 17 typV |
| Desaturation threshold | 7.5 typV |
| Desaturation blanking time | 500 typns |
| Charge pump oscillator frequency | 390 typkHz |
| Turn-on propagation delay | 25 typ, 50 maxns |
| Turn-off propagation delay | 25 typ, 50 maxns |
| Turn-on rise time | 8 typ, 15 maxns |
| Turn-off fall time | 8 typ, 15 maxns |
