N-Channel MOSFET, logic level enhancement mode, featuring 60V drain-source breakdown voltage and 48A continuous drain current. Offers a low 25mΩ maximum drain-source on-resistance. Designed for surface mounting in a TO-263AB package, this single-element transistor operates from -55°C to 175°C with 100W maximum power dissipation. RoHS compliant and lead-free.
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| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 48A |
| Current Rating | 48A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 25mR |
| Dual Supply Voltage | 60V |
| Element Configuration | Single |
| Fall Time | 161ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 60V |
| Weight | 1.31247g |
| RoHS | Compliant |
These are design resources that include the Onsemi NDB6060L
Product discontinuance notice from onsemi for various MOSFETs and transistors produced at the Tower Jazz fab, providing end-of-life dates and potential replacement parts.
Immediate product discontinuance notice from onsemi for various MOSFETs and discrete components produced at the Tower fab, effective December 24, 2021.
