N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 2.2A continuous drain current. This single element MOSFET offers a maximum drain-source on-resistance of 4.8 Ohms at a nominal gate-source voltage of 4.5V. Designed for surface mount applications, it is housed in a DPAK package with dimensions of 6.73mm length, 6.22mm width, and 2.38mm height. Key switching characteristics include a 7ns fall time and 9ns turn-on delay time. Maximum power dissipation is rated at 57W, with operating temperatures ranging from -55°C to 150°C.
PackageDPAK
PolarityN-CHANNEL
Power57W
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Technical Specifications
Onsemi NDD02N60ZT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 4R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 4.8R |
| Element Configuration | Single |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.38mm |
| Input Capacitance | 325pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Nominal Vgs | 4.5V |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 57W |
| Radiation Hardening | No |
| Rds On Max | 4.8R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 9ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDD02N60ZT4G Datasheet
Download the complete datasheet for Onsemi NDD02N60ZT4G to view detailed technical specifications.
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