NDD03N50Z-1G

500V 2.6A N-CH MOSFET, 3.3R Rds(on), TO-251

N-channel MOSFET featuring 500V drain-source breakdown voltage and 2.6A continuous drain current. This HVFET offers a low 3.3 Ohm drain-source resistance (Rds On Max) and is housed in a TO-251-3 (IPAK) package. Key switching characteristics include a 7ns fall time, 15ns turn-off delay, and 9ns turn-on delay, with an input capacitance of 274pF. Maximum power dissipation is rated at 58W, operating across a temperature range of -55°C to 150°C. This component is lead-free and RoHS compliant.

PackageTO-251-3

PolarityN-CHANNEL

Power58W

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Technical Specifications

Onsemi NDD03N50Z-1G technical specifications.

General

Package/Case	TO-251-3
Continuous Drain Current (ID)	2.6A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	3.3R
Drain to Source Voltage (Vdss)	500V
Element Configuration	Single
Fall Time	7ns
Gate to Source Voltage (Vgs)	30V
Height	7.62mm
Input Capacitance	274pF
Lead Free	Lead Free
Length	6.73mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	58W
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	58W
Radiation Hardening	No
Rds On Max	3.3R
RoHS Compliant	Yes
Turn-Off Delay Time	15ns
Turn-On Delay Time	9ns
Width	2.38mm