N-channel MOSFET featuring 500V drain-source breakdown voltage and 2.6A continuous drain current. This HVFET offers a low 3.3 Ohm drain-source resistance (Rds On Max) and is housed in a TO-251-3 (IPAK) package. Key switching characteristics include a 7ns fall time, 15ns turn-off delay, and 9ns turn-on delay, with an input capacitance of 274pF. Maximum power dissipation is rated at 58W, operating across a temperature range of -55°C to 150°C. This component is lead-free and RoHS compliant.
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| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 3.3R |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 7.62mm |
| Input Capacitance | 274pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 58W |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 58W |
| Radiation Hardening | No |
| Rds On Max | 3.3R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 9ns |
| Width | 2.38mm |
| RoHS | Compliant |
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