N-Channel Power MOSFET, 600V Drain to Source Breakdown Voltage, 4.1A Continuous Drain Current, and 1.8 Ohm Max Drain-Source On Resistance. Features a DPAK surface mount package with a 6.73mm length, 6.22mm width, and 2.38mm height. Operates from -55°C to 150°C with 83W maximum power dissipation. Includes a 3.9V threshold voltage and fast switching times with 13ns turn-on and 24ns turn-off delay.
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| Package/Case | DPAK |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 1.8R |
| Element Configuration | Single |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.38mm |
| Input Capacitance | 640pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3.9V |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 13ns |
| Width | 6.22mm |
| RoHS | Compliant |
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Onsemi product discontinuance notice (PD21859X) for specific MOSFETs due to chip supplier wafer technology exit. Last time buy: Dec 15, 2017.
