The NDD60N360U1-35G is a single N-channel MOSFET with a maximum drain to source voltage of 600V and a continuous drain current of 11A. It features a drain to source resistance of 360mR and a gate to source voltage of 25V. The device is packaged in a TO-251-3 package and is suitable for operation over a temperature range of -55°C to 150°C. The NDD60N360U1-35G is lead free and halogen free, and is compliant with RoHS regulations.
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| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 360mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 25V |
| Halogen Free | Halogen Free |
| Input Capacitance | 790pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 114W |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 360mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
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Onsemi product discontinuance notice (PD21859X) for specific MOSFETs due to chip supplier wafer technology exit. Last time buy: Dec 15, 2017.
