The NDD60N550U1-1G is a TO-251-3 packaged N-channel MOSFET with a maximum drain to source voltage of 600V and continuous drain current of 8.2A. It has a maximum power dissipation of 94W and operates over a temperature range of -55°C to 150°C. The device is lead free and RoHS compliant. The input capacitance is 540pF and the Rds on max is 550mR.
PackageTO-251-3
MountingThrough Hole
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Technical Specifications
Onsemi NDD60N550U1-1G technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 8.2A |
| Drain to Source Voltage (Vdss) | 600V |
| Input Capacitance | 540pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 94W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Rds On Max | 550mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDD60N550U1-1G Datasheet
Download the complete datasheet for Onsemi NDD60N550U1-1G to view detailed technical specifications.
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