
The NDD60N550U1-1G is a TO-251-3 packaged N-channel MOSFET with a maximum drain to source voltage of 600V and continuous drain current of 8.2A. It has a maximum power dissipation of 94W and operates over a temperature range of -55°C to 150°C. The device is lead free and RoHS compliant. The input capacitance is 540pF and the Rds on max is 550mR.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NDD60N550U1-1G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 8.2A |
| Drain to Source Voltage (Vdss) | 600V |
| Input Capacitance | 540pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 94W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Rds On Max | 550mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NDD60N550U1-1G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.