N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 2.4A continuous drain current. This single element transistor offers a low 4.8 Ohm drain-to-source resistance (Rds On Max) and a maximum power dissipation of 24W. Designed for efficient switching, it exhibits a typical fall time of 7ns and turn-on delay of 9ns. Available in TO-220FP and TO-220 3 lead fullpak packages, this RoHS compliant component operates from -55°C to 150°C.
Onsemi NDF02N60ZG technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 4R |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.12mm |
| Input Capacitance | 274pF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 24W |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 24W |
| Radiation Hardening | No |
| Rds On Max | 4.8R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 9ns |
| Width | 4.9mm |
| RoHS | Compliant |
No datasheet is available for this part.
