N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 4.8A continuous drain current. Offers a maximum drain-source on-resistance of 2.0 Ohms. Designed for high-efficiency switching applications with fast switching speeds, including turn-on delay of 13ns and fall time of 15ns. Available in TO-220FP and TO-220 3-lead fullpak packages, with a maximum power dissipation of 30W. This RoHS compliant component operates from -55°C to 150°C.
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Onsemi NDF04N60ZG technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 2R |
| Element Configuration | Single |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.12mm |
| Input Capacitance | 640pF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 28W |
| Radiation Hardening | No |
| Rds On Max | 2R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 13ns |
| Width | 4.9mm |
| RoHS | Compliant |
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