
N-channel Power MOSFET featuring 620V drain-to-source breakdown voltage and 4.4A continuous drain current. Offers 2 Ohm drain-to-source resistance and 28W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, with fast switching characteristics including 14ns fall time, 25ns turn-off delay, and 12ns turn-on delay. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
Onsemi NDF04N62ZG technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Breakdown Voltage | 620V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 620V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.12mm |
| Input Capacitance | 535pF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 28W |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 12ns |
| Width | 4.9mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NDF04N62ZG to view detailed technical specifications.
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