N-channel enhancement mode power MOSFET featuring 500V drain-source voltage and 5.5A continuous drain current. This single element transistor is housed in a 3-pin TO-220FP package with through-hole mounting. Key specifications include a maximum drain-source resistance of 1500 mOhm at 10V, typical gate charge of 18.5 nC at 10V, and typical input capacitance of 530 pF at 25V. Maximum power dissipation is 30W, with an operating temperature range of -55°C to 150°C.
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Onsemi NDF05N50ZG technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220FP |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 15.3(Max) |
| Seated Plane Height (mm) | 18.1(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 5.5A |
| Maximum Drain Source Resistance | 1500@10VmOhm |
| Typical Gate Charge @ Vgs | 18.5@10VnC |
| Typical Gate Charge @ 10V | 18.5nC |
| Typical Input Capacitance @ Vds | 530@25VpF |
| Maximum Power Dissipation | 30000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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