The NDF05N50ZH is a single N-channel MOSFET with a drain to source breakdown voltage of 500V and a continuous drain current of 5.5A. It has a maximum power dissipation of 30W and is packaged in a TO-220-3 case. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The NDF05N50ZH features a gate to source voltage of 30V and a drain to source resistance of 1.5R.
Onsemi NDF05N50ZH technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 632pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 11ns |
| RoHS | Compliant |
No datasheet is available for this part.
