N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 7.1A continuous drain current. Offers a maximum on-resistance of 1.2 Ohms (980mR typical) and a maximum power dissipation of 35W. Designed with a TO-220-3 package, it operates from -55°C to 150°C and includes fast switching characteristics with turn-on delay of 13ns and fall time of 28ns. This RoHS compliant component is supplied in a 50-unit tube.
Onsemi NDF06N60ZG technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7.1A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 980mR |
| Drain-source On Resistance-Max | 1.2R |
| Element Configuration | Single |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.12mm |
| Input Capacitance | 1.107nF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 31W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 13ns |
| Width | 4.9mm |
| RoHS | Compliant |
No datasheet is available for this part.
