N-channel Power MOSFET featuring 620V drain-source breakdown voltage and 6A continuous drain current. Offers a maximum drain-source on-resistance of 1.2 Ohms and 980mOhms. Designed for through-hole mounting in a TO-220-3 package, with a maximum power dissipation of 31W. Operates across a temperature range of -55°C to 150°C, with typical turn-on delay of 13ns and fall time of 28ns. RoHS compliant and lead-free.
Onsemi NDF06N62ZG technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 620V |
| Drain to Source Resistance | 980mR |
| Drain to Source Voltage (Vdss) | 620V |
| Drain-source On Resistance-Max | 1.2R |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.12mm |
| Input Capacitance | 923pF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 31W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 13ns |
| Width | 4.9mm |
| RoHS | Compliant |
No datasheet is available for this part.
