N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 8.5A continuous drain current. Offers a low 690mΩ drain-source resistance at a nominal 4.5V gate-source voltage. Designed for efficient switching with turn-on delay of 13ns and fall time of 29ns. Housed in a TO-220-3 package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 35W.
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Onsemi NDF08N50ZG technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 8.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 690mR |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.12mm |
| Input Capacitance | 1.095nF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Nominal Vgs | 4.5V |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 31W |
| Radiation Hardening | No |
| Rds On Max | 850mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 13ns |
| Width | 4.9mm |
| RoHS | Compliant |
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