N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 8.4A continuous drain current. Offers 950mΩ drain-to-source resistance and 35W power dissipation. Designed with TO-220-3 packaging, it has a maximum operating temperature of 150°C and is lead-free and RoHS compliant. Key switching characteristics include a 15ns fall time, 14ns turn-on delay, and 36ns turn-off delay.
PackageTO-220-3
PolarityN-CHANNEL
Power35W
Quick Jump:
Technical Specifications
Onsemi NDF08N60ZG technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 8.4A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 950mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.12mm |
| Input Capacitance | 1.14nF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 950mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 14ns |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDF08N60ZG Datasheet
Download the complete datasheet for Onsemi NDF08N60ZG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
