The NDH8304P is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 2.7A and a maximum power dissipation of 800mW. The device is lead-free and RoHS compliant, packaged in tape and reel with 3000 units per package. The MOSFET has a drain to source breakdown voltage of -20V and a drain to source resistance of 61mR.
Onsemi NDH8304P technical specifications.
| Continuous Drain Current (ID) | 2.7A |
| Current Rating | -2.7A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 61mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 865pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 800mW |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 78ns |
| DC Rated Voltage | -20V |
| RoHS | Compliant |
No datasheet is available for this part.
