N-Channel Logic Level MOSFET, featuring 60V drain-source breakdown voltage and a maximum continuous drain current of 48A. This single-element transistor offers a low drain-source on-resistance of 25mΩ at a 10V gate-source voltage. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C and supports a maximum power dissipation of 100W. Key switching characteristics include a 15ns turn-on delay and a 161ns fall time.
PackageTO-220AB
Current Rating48A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi NDP6060L technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 48A |
| Current Rating | 48A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 25mR |
| Element Configuration | Single |
| Fall Time | 161ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 20mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 60V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDP6060L Datasheet
Download the complete datasheet for Onsemi NDP6060L to view detailed technical specifications.
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