
P-channel enhancement mode JFET transistor featuring -60V drain-source breakdown voltage and 180mA continuous drain current. Surface mount SOT-23 package with 5 Ohm maximum drain-source on resistance. Operates from -55°C to 150°C with 360mW power dissipation. Includes 2.5ns turn-on delay and 6.3ns fall time.
Onsemi NDS0605 technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 180mA |
| Current Rating | -180mA |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5R |
| Dual Supply Voltage | -60V |
| Element Configuration | Single |
| Fall Time | 6.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.93mm |
| Input Capacitance | 79pF |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Nominal Vgs | -1.7V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 360mW |
| Radiation Hardening | No |
| Rds On Max | 5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.7V |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 2.5ns |
| DC Rated Voltage | -60V |
| Weight | 0.03g |
| Width | 3.05mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NDS0605 to view detailed technical specifications.
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