P-channel MOSFET with 30V drain-source breakdown voltage and 900mA continuous drain current. Features a maximum drain-source on-resistance of 500mΩ at a nominal gate-source voltage of -1.7V. Surface mountable in a TO-236-3 (SOT-23) package, this single-element transistor offers fast switching with turn-on delay of 8ns and fall time of 16ns. Maximum power dissipation is 500mW, operating from -55°C to 150°C.
PackageTO-236-3
Current Rating-900mA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi NDS352AP technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 900mA |
| Current Rating | -900mA |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 500mR |
| Dual Supply Voltage | -30V |
| Element Configuration | Single |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.22mm |
| Input Capacitance | 135pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Nominal Vgs | -1.7V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Rds On Max | 300mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.7V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | -30V |
| Weight | 0.03g |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDS352AP Datasheet
Download the complete datasheet for Onsemi NDS352AP to view detailed technical specifications.
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