
N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for surface mount applications. Features a 30V drain-source breakdown voltage and a continuous drain current of 1.7A. Offers a low drain-source on-resistance of 85mΩ at a nominal gate-source voltage of 1.6V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. Packaged in a SOT-23 case, supplied on a 3000-piece tape and reel.
Onsemi NDS355AN technical specifications.
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