N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for surface mount applications. Features a 30V drain-source breakdown voltage and a continuous drain current of 1.7A. Offers a low drain-source on-resistance of 85mΩ at a nominal gate-source voltage of 1.6V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. Packaged in a SOT-23 case, supplied on a 3000-piece tape and reel.
PackageSOT-23
Current Rating1.7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi NDS355AN technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
1.7A
Current Rating
1.7A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
85mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
85mR
Dual Supply Voltage
30V
Element Configuration
Single
Fall Time
32ns
Gate to Source Voltage (Vgs)
20V
Height
0.94mm
Input Capacitance
195pF
Lead Free
Lead Free
Length
2.92mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Nominal Vgs
1.6V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
500mW
Rds On Max
85mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
13ns
Turn-On Delay Time
10ns
DC Rated Voltage
30V
Weight
0.03g
Width
3.05mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NDS355AN Datasheet
Download the complete datasheet for Onsemi NDS355AN to view detailed technical specifications.
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