N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for surface mounting in a TO-236-3 package. Features a 30V Drain to Source Breakdown Voltage and a continuous drain current of 1.6A. Offers a low Drain-source On Resistance of 85mΩ at 10V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. Includes fast switching characteristics with a turn-on delay of 15ns and fall time of 14ns.
PackageTO-236-3
Current Rating1.6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi NDS355N technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 1.6A |
| Current Rating | 1.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 125mR |
| Element Configuration | Single |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.12mm |
| Input Capacitance | 245pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 85mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 30V |
| Weight | 0.03g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDS355N Datasheet
Download the complete datasheet for Onsemi NDS355N to view detailed technical specifications.
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