N-Channel Enhancement Mode Field Effect Transistor, surface mountable in SOT-23 package. Features 60V drain-source breakdown voltage, 280mA continuous drain current, and a maximum on-resistance of 2Ω. Operates with a gate-source voltage up to 20V and a nominal threshold voltage of 2.1V. Maximum power dissipation is 300mW, with operating temperatures ranging from -65°C to 150°C. Supplied on a 3000-piece tape and reel.
PackageSOT-23
Voltage60V
Current Rating280mA
MountingSurface Mount
Quick Jump:
Technical Specifications
Onsemi NDS7002A technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
280mA
Current Rating
280mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
2R
Dual Supply Voltage
60V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
50pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
300mW
Mount
Surface Mount
Nominal Vgs
2.1V
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
300mW
Radiation Hardening
No
Rds On Max
2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
2.1V
Voltage
60V
DC Rated Voltage
60V
Width
3.05mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NDS7002A Datasheet
Download the complete datasheet for Onsemi NDS7002A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
