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Technical Specifications
Onsemi NDS8852H technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.4A |
| Current Rating | 3.4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 300pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 80mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 21ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NDS8852H Datasheet
Download the complete datasheet for Onsemi NDS8852H to view detailed technical specifications.
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