The NDS8852H is a dual N- and P-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of 3.4A and a maximum power dissipation of 1W. The device is packaged in a surface-mount SOIC package and is available on tape and reel. The NDS8852H has a drain to source breakdown voltage of 30V and a drain to source resistance of 80mR.
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| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.4A |
| Current Rating | 3.4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 300pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 80mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 21ns |
| RoHS | Not Compliant |
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