N- and P-channel dual JFET transistor in SOIC package for surface mount applications. Features 30V drain-to-source breakdown voltage, 4.8A continuous drain current, and 35mΩ drain-to-source resistance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2.5W. Includes 19ns fall time and 40ns turn-off delay time, with 720pF input capacitance. Lead-free and supplied on tape and reel.
PackageSOIC
Current Rating4.8A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi NDS8858H technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.8A |
| Current Rating | 4.8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 19ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 720pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| Turn-Off Delay Time | 40ns |
| Weight | 0.2304g |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi NDS8858H Datasheet
Download the complete datasheet for Onsemi NDS8858H to view detailed technical specifications.
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