P-channel, dual-element silicon JFET for surface mounting. Features a continuous drain current of 4A, drain-source breakdown voltage of -30V, and a maximum drain-source on-resistance of 65mR. Operates with a gate-to-source voltage up to 20V and a nominal threshold voltage of -1.6V. Maximum power dissipation is 900mW, with a maximum operating temperature of 150°C. Packaged in SOIC for tape and reel distribution.
PackageSOIC
Current Rating-4A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi NDS8947 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4A |
| Current Rating | -4A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 65mR |
| Dual Supply Voltage | -30V |
| Element Configuration | Dual |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 690pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Nominal Vgs | -1.6V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| Reach SVHC Compliant | No |
| Row Spacing | 6.3mm |
| Threshold Voltage | -1.6V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | -30V |
| Weight | 0.2304g |
| Width | 4.05mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi NDS8947 Datasheet
Download the complete datasheet for Onsemi NDS8947 to view detailed technical specifications.
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